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Home > Products > Ic Integrated Circuit >
IPD320N20N3G Ic Integrated Circuit TO-252

IPD320N20N3G Ic Integrated Circuit TO-252

IPD320N20N3G Ic Integrated Circuit

TO-252 Ic Integrated Circuit

IPD320N20N3G Integrated Circuit Ic Chip

Place of Origin:

original

Brand Name:

INFINEON

Model Number:

IPD320N20N3G

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IPD320N20N3G Ic Integrated Circuit TO-252
IPD320N20N3G Ic Integrated Circuit TO-252 IPD320N20N3G Ic Integrated Circuit TO-252
Product Details
Quality：:
Brand New Unused
Package / Box::
TO-252
Payment & Shipping Terms
Minimum Order Quantity
1pcs
Price
Negotiate
Packaging Details
4000
Delivery Time
3
Stock
8000+
Payment Terms
D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability
97830pcs
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Product Description

ISO9001.pdf

Application: IPD320N20N3G is an N-channel MOSFET transistor used for high-efficiency DC-DC converters and inverter applications. It can operate at high voltage, with low conduction resistance and high switching speed.
Conclusion: IPD320N20N3G has the characteristics of high efficiency, high voltage, and low conduction resistance, making it suitable for high-power DC-DC converters and inverters. It can improve the energy efficiency of the system, reduce power loss, and have a longer service life.
Parameters:
Vds (max)=200V (maximum withstand voltage)
Id=320A (maximum drain current)
Rds (on)=3.3m Ω (conduction resistance)
Qg=230nC (gate charge)
Vgs (th)=4V (gate threshold voltage)
Ciss=12300pF (input capacitance)
Coss=1170pF (output capacitance)
Crss=570pF (reverse transmission capacitance)

Product Technical Specifications  
   
EU RoHS Compliant with Exemption聽
ECCN (US) EAR99
Part Status Unconfirmed
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Process Technology OptiMOS 3
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200
Maximum Gate Source Voltage (V) 卤20
Maximum Gate Threshold Voltage (V) 4
Operating Junction Temperature (掳C) -55 to 175
Maximum Continuous Drain Current (A) 34
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 32@10V
Typical Gate Charge @ Vgs (nC) 22@10V
Typical Gate Charge @ 10V (nC) 22
Typical Gate to Drain Charge (nC) 3
Typical Gate to Source Charge (nC) 8
Typical Reverse Recovery Charge (nC) 500
Typical Switch Charge (nC) 5
Typical Input Capacitance @ Vds (pF) 1770@100V
Typical Reverse Transfer Capacitance @ Vds (pF) 4@100V
Minimum Gate Threshold Voltage (V) 2
Typical Output Capacitance (pF) 135
Maximum Power Dissipation (mW) 136000
Typical Fall Time (ns) 4
Typical Rise Time (ns) 9
Typical Turn-Off Delay Time (ns) 21
Typical Turn-On Delay Time (ns) 11
Minimum Operating Temperature (掳C) -55
Maximum Operating Temperature (掳C) 175
Packaging Tape and Reel
Maximum Pulsed Drain Current @ TC=25掳C (A) 136
Maximum Junction Ambient Thermal Resistance on PCB (掳C/W) 50
Typical Diode Forward Voltage (V) 0.9
Typical Gate Plateau Voltage (V) 4.4
Typical Reverse Recovery Time (ns) 110
Maximum Diode Forward Voltage (V) 1.2
Typical Gate Threshold Voltage (V) 3
Maximum Positive Gate Source Voltage (V) 20
Mounting Surface Mount
Package Height 2.41(Max)
Package Width 6.22(Max)
Package Length 6.73(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-252
Supplier Package DPAK
Pin Count 3
Lead Shape Gull-wing
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XILINX Ic Integrated Circuit

Ic Integrated Circuit CHIP

IC Integrated Circuit Original

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